Semiconductor light emitting device and method for manufacturing the same

ABSTRACT

Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate, and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of co-pending application Ser. No.12/103,593, filed Apr. 15, 2008, and claims priority under 35 U.S.C. 119to Korean Patent Application No. 10-2007-0036857 (filed on Apr. 16,2007), which are hereby incorporated by reference in their entirety.

BACKGROUND

Groups III-V nitride semiconductors have been variously applied to anoptical device such as blue and green light emitting diodes (LED), ahigh speed switching device, such as a MOSFET (Metal Semiconductor FieldEffect Transistor) and an HEMT (Hetero junction Field EffectTransistors), and a light source of a lighting device or a displaydevice.

The nitride semiconductor is mainly used for the LED (Light EmittingDiode) or an LD (laser diode), and studies have been continuouslyconducted to improve the manufacturing process or a light efficiency ofthe nitride semiconductor.

SUMMARY

The embodiment provides a semiconductor light emitting device capable ofimproving uniformity in a wavelength of the semiconductor light emittingdevice and a method for manufacturing the same.

The embodiment provides a semiconductor light emitting device capable ofimproving temperature distribution and a curvature of a substrate byusing a pattern formed in a backside of the substrate and a method formanufacturing the same.

The embodiment provides a semiconductor light emitting devicecomprising; a substrate, in which concave-convex patterns are in atleast a portion of a backside of the substrate, and a light emittingstructure on the substrate and comprising a first conductivesemiconductor layer, an active layer and a second conductivesemiconductor layer.

The embodiment provides a semiconductor light emitting devicecomprising; a substrate comprising concave-convex patterns in a backsideand a top-side of the substrate, and a light emitting structure on thesubstrate and comprising at least one of an N-type semiconductor layer,an active layer and a P-type semiconductor layer.

The embodiment provides a method for manufacturing a semiconductor lightemitting device comprising; the steps of forming concave-convex patternsin at least a portion of a backside of a substrate, and forming a lightemitting structure comprising an active layer on the substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a side sectional view representing a semiconductor lightemitting device according to a first embodiment;

FIG. 2 is a plan view representing a structure of a pattern formed in abackside of a substrate shown in FIG. 1;

FIG. 3 is a plan view representing another example of a structure of apattern formed in a backside of the substrate shown in FIG. 1;

FIG. 4 is a view representing the substrate, in which the center area ofthe substrate is concave-down during a growth of a semiconductor layeraccording to the first embodiment;

FIG. 5 is a view for comparing curvatures between the substrateaccording to the first embodiment and a conventional substrate when thesemiconductor light emitting device is manufactured;

FIG. 6 is a view representing uniformity of a wavelength of thesemiconductor light emitting device grown on the substrate according tothe first embodiment;

FIG. 7 is a graph representing wavelength distribution in variouspositions of the substrate shown in FIG. 6;

FIG. 8 is a side sectional view representing the substrate of thesemiconductor light emitting device according to the first embodiment,which has been subject to a lapping process and a polishing process;

FIG. 9 is a side sectional view representing a semiconductor lightemitting device according to a second embodiment;

FIG. 10 is a side sectional view representing a semiconductor lightemitting device according to a third embodiment; and

FIG. 11 is a side sectional view representing a semiconductor lightemitting device according to a fourth embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, a semiconductor light emitting device and a method formanufacturing the same according to the embodiment will be describedwith reference to the accompanying drawings.

FIG. 1 is a sectional view representing a semiconductor light emittingdevice according to the embodiment, and FIG. 2 is a plan viewrepresenting an example of a backside of a substrate shown in FIG. 1.

As shown in FIGS. 1 and 2, a semiconductor light emitting device 100comprises a substrate 110, a buffer layer 122 and a light emittingstructure 120.

The substrate 110 comprises at least one selected from the groupconsisting of sapphire (Al₂O₃), GaN, SiC, ZnO, GaP, GaAs and Si.

Concave-convex patterns 111 and 114 are formed in a backside of thesubstrate 110. A first partial pattern is formed in the backside of thesubstrate 110 by using a stepper, and then a next partial pattern isformed such that the first partial pattern overlaps with the nextpartial pattern, thereby forming the concave-convex patterns 111 and114. In addition, the concave-convex patterns 111 and 114 may be formedby performing at least one of a wet etching process and a dry etchingprocess with respect to the backside of the substrate 110.

The concave-convex patterns 111 and 114 are formed along a transversedirection or a longitudinal direction in such a manner that concavepatterns 112 and 115 and convex patterns 113 and 116 of theconcave-convex patterns 111 and 114 are alternately formed. For example,the concave-convex patterns 111 and 114 may be alternately formed alongthe transverse direction as shown in FIG. 2. In addition, theconcave-convex patterns 111 and 114 can be aligned along thelongitudinal direction, or a transverse/longitudinal direction. As shownin FIG. 2, the concave-convex patterns 111 and 114 are formed in astripe shape along the first or second direction.

A first concave-convex pattern 111 (112 and 113) and a secondconcave-convex pattern 114 (115 and 116) may be formed in differentareas, respectively. According to the embodiment, the substrate 110 isdivided into a center area Ac and both side areas As based on thedirection of the pattern formed in the backside of the substrate 110. Inthe present embodiment, the patterns are formed in the longitudinaldirection while being aligned in the transverse direction. The centerarea Ac of the backside of the substrate 110 is equal to or less than a⅓ radius of the substrate 110, and the side area As is a remaining areaexcept for the center area Ac.

A plurality of first concave-convex patterns 111 are formed at both sideareas As of the backside of the substrate 110, and a plurality of secondconcave-convex patterns 114 are formed at the center area Ac of thebackside of the substrate 110.

The first concave-convex patterns 111 are formed at predeterminedintervals and a first concave pattern 112 has a predetermined width W1The second concave-convex patterns 114 are formed at predeterminedintervals and a second concave pattern 115 has a width W2 larger thanthe width W1. The width W2 is 1.5 to 2.5 times as large as the width W1.According to another example, a concave pattern may have a width thatbecomes narrower step by step from the center area Ac to the both sideareas As of the backside of the substrate 110.

The concave pattern 115 formed in the backside of the substrate 110 hasthe width W2 of 1 to 10 um, and the concave patterns 112 and 115 have adepth D2 of 200 to 400 um. The depth D2 of the concave patterns 112 and115 may be changed corresponding to a depth D1 of the substrate 110 (forinstance, about 430 um).

The concave patterns 112 and 115 and/or convex patterns 113 and 116formed in the backside of the substrate 110 may have a cross section ofa polygonal shape, a horn-shape or a hemisphere shape, but theembodiment is not limited thereto.

Although the embodiment represents a structure comprising theconcave-convex patterns 111 and 114 formed at the entire area of thesubstrate 110, the concave-convex patterns 111 and 114 may be formedonly at a partial area, which generates a large quantity of heat, thatis, at the center area Ac of the substrate 110 along the longitudinaldirection and/or the transverse direction.

The substrate 110 is mounted on a susceptor of a semiconductormanufacturing apparatus. The semiconductor manufacturing apparatuscomprises an MOCVD (Metal Organic Chemical Vapor Deposition) apparatus,an MBE (Molecular Beam Epitaxy) apparatus, and a CVD (Chemical VaporDeposition) apparatus. Elements, such as a gallium nitride basedsemiconductor light emitting device, an HEMT (High Electron MobilityTransistor), an FET (Field Effect Transistor) and a laser diode, aregrown on the substrate (not shown) by using such apparatuses.Hereinafter, a structure comprising the gallium nitride basedsemiconductor light emitting device formed on the substrate 110 will bedescribed as an example.

A buffer layer 122 is formed on the substrate 110. NH₃ and TMGa (orTEGa) are supplied at a predetermined growth temperature (for example,around 500° C.), so that the buffer layer 112 is formed with apredetermined thickness. The buffer layer 122 serves to reduce a latticeconstant between an upper surface of the substrate 110 and a GaNsemiconductor layer, and may comprise at least one selected from thegroup consisting of GaN, AlN, AlGaN, InGaN and AlInGaN.

An undoped semiconductor layer (not shown) which is not doped withdopants may be formed on the buffer layer 122. The buffer layer 122 orthe undoped semiconductor layer may exist, or both the buffer layer 122and the undoped semiconductor layer may not exist.

A light emitting structure 120 is formed on the buffer layer 122. Thelight emitting structure 120 comprises a first conductive semiconductorlayer 124, an active layer 126 and a second conductive semiconductorlayer 128. The light emitting structure 120 comprises a P—N structure,in which the first conductive semiconductor layer 124 is prepared in theform of an N-type semiconductor layer and the second conductivesemiconductor layer 128 is prepared in the form of a P-typesemiconductor layer. The light emitting structure 120 may comprise a P—Njunction structure, an N—P junction structure, an N—P—N junctionstructure or a P—N—P junction structure. Hereinafter, the followingdescription will be made in relation to the P—N junction structure as anexample.

The first conductive semiconductor layer 124 is formed on the bufferlayer 122. The first conductive semiconductor layer 124 is formed in theform of the N-type semiconductor layer, and an N—GaN layer is grown byproviding gas comprising n-type dopants such as NH3, TMGa (or TEGa) andSi at a high-growth temperature (for example, 900° C. or above) for apredetermined time (for example, 7200 sec or above) such that the N—GaNlayer has a predetermined thickness. The first conductive semiconductorlayer 124 comprises at least one selected from the group consisting ofGaN, AlGaN, InGaN, InN, AlN and InAlGaN. The first conductivesemiconductor layer 124 is doped with n-type dopants such as Si, Ge, Sn,Se and Te.

The active layer 126 comprising a single quantum well structure or amultiple quantum well structure is formed on the first conductivesemiconductor layer 124. The active layer 126 is grown by providing gascomprising NH₃, TMGa, and TMIn at a predetermined growth temperature, sothat the active layer 126 comprises an InGaN/GaN structure.

A second conductive semiconductor layer 128 is formed on the activelayer 126. The second conductive semiconductor layer 128 comprises theP-type semiconductor layer. The P-type semiconductor layer comprises atleast one selected from the group consisting of GaN, GaN, InN, AlN,InGaN, AlGaN and InAlGaN, and is doped with p-type dopants such as Mg,Be and Zn.

Such nitride semiconductor layers 122, 124, 126 and 128 are grown withina temperature range between hundreds of degrees and thousands of degrees(for example, within a temperature range between 500 and 1200° C.). Inparticular, the N-type semiconductor layer 124 is grown at a hightemperature of 900° C. or above.

When the semiconductor layers are grown, if a pattern does not exist inthe backside of the substrate 110, various problems may occur. Forexample, while the N-type semiconductor layer having a high-temperatureis being grown, the temperature of the center area Ac is relativelyincreased and the temperature of the side area As of the substrate 110is relatively lowered. Accordingly, a concave-up phenomenon occurs atthe center area Ac of the substrate 110, and the concave-up phenomenonexerts an influence upon a growth of the active layer 126, therebydeteriorating wavelength uniformity over the whole area of the substrate110. That is, a problem occurs in that a wavelength of the semiconductorlight emitting device 100 formed at the center area Ac of the substrate110 is relatively short and a wavelength of the semiconductor lightemitting device 100 formed on the side area As is relatively long.

To this end, the concave-convex patterns 111 and 114 are formed in thebackside of the substrate 110. The second concave-convex pattern 114formed at the center area Ac reduces temperature deviation between thecenter area Ac and the side area As. In addition, the secondconcave-convex pattern 114 attenuates the concave-up phenomenon at thecenter area Ac of the substrate 110 and improves the wavelengthuniformity of the semiconductor light emitting device 100 which isformed on the substrate 110.

FIG. 3 is a plan view representing another example of a concave-convexpattern formed in the backside of the substrate shown in FIG. 1.

As shown in FIG. 3, concave-convex patterns 111A and 114A formed in thebackside of the substrate 110 comprise an oval shape and are symmetricalto each other about the center of the backside of the substrate 110.When the patterns 111A and the 114A are formed, a width of at leastcenter area of the second concave pattern 115 of the center area Ac hasa width larger than that of a first concave pattern 112 of the side areaAs. The patterns 111A and 114A comprise a rhombus shape or a circleshape, and the shape of patterns 111A and 114A may be changed accordingto embodiments.

FIG. 4 is a view representing the substrate, in which the center area ofthe substrate is concave-down during a growth of the semiconductor layeraccording to the first embodiment.

As shown in FIG. 4, the buffer layer 122 and the first conductivesemiconductor layer 124 are sequentially formed on the substrate 110comprising the concave-convex patterns 112, 113, 115 and 116.

At the center area Ac of the substrate 110, an interference of heat F1between two convex patterns 116 is reduced or removed by the secondconcave pattern 115. In this case, the center area Ac is deformed to beconcave-down. The concave-down deformation occurring at the center areaAc of the substrate 110 offsets the concave-up deformation, therebyreducing the concave-up deformation, which occurs at the center area Acof the substrate 110 when the first conductive semiconductor layer 124is formed at the high temperature.

In addition, at the side area As of the substrate 110, an interferenceof heat F2 between two convex patterns 113 is increased by the firstconcave pattern 112, and the temperature of the side area As isincreased, so that the substrate 110 is scarcely deformed at the sidearea As.

FIG. 5 is a view for comparing curvatures of the substrate according tothe first embodiment and a conventional substrate when the semiconductorlight emitting device is manufactured. A graph P0 represents a curvatureof a conventional substrate which does not comprise a concave-convexpattern at the backside thereof. A graph P1 represents a curvature ofthe substrate according to the embodiment. In addition, a run time forthe semiconductor layer provided on the substrate is an illustrativepurpose only, and the embodiment is not limited thereto.

As shown in FIG. 5, the buffer layer 122, the N-type semiconductor layer124, the active layer 126 and the P-type semiconductor layer 128 aresequentially formed on the substrate 110 comprising the concave-convexpatterns 111 and 114. The buffer layer 122 is formed within a time of T1(for example, 1000 sec or below), and the N-type semiconductor layer 124is formed within a range of T1 to T2 (for example, 1000 to 5000 sec). Inaddition, the active layer 126 is formed within a range of T2 to T3 (forexample, 500 to 12000 sec).

Referring to T1 to T2 corresponding to the run time of the N-typesemiconductor 124, the curvature of the substrate 110 of the P1 is about−100 and the curvature of the substrate 110 of the graph P0 is −200 orbelow, thereby causing a predetermined gap between the curvatures.Accordingly, when the N-type semiconductor layer 124 according to theembodiment is grown, the graph P1 representing the curvature of thesubstrate according to the embodiment is improved by 2 to 2.5 times ascompared with the graph P0 representing the curvature of the substratewhich does not comprise the patterns at the backside thereof.

In other words, when the N-type semiconductor layer 124 is formed on thesubstrate 110, the concave-convex patterns 111 and 114 formed in thebackside of the substrate 110 cause the concave-down phenomenon, and theconcave-down phenomenon offsets the concave-up phenomenon, whichnaturally occurs on the substrate 110, thereby improving the curvatureof the substrate 110 by 2 times or above.

In addition, when the active layer 126 is formed after the N-typesemiconductor layer 124 has been formed, the curvature of the substrate110 represents approximately 0. Accordingly, the active layer 126 can begrown on the entire area of the substrate 110 at the uniformtemperature, thereby preventing the wavelength of the semiconductorlight emitting device 100 from being increased in the direction of theside area As of the substrate 110. In addition, the wavelength for theradiated light has uniform wavelength distribution over the entire areaof the substrate, so that the wavelength uniformity of the substrate 110can be improved.

FIG. 6 is a view representing wavelength uniformity of the semiconductorlight emitting device grown on the substrate according to the firstembodiment.

As shown in FIG. 6, the wavelength distribution for the semiconductorlight emitting device 100 grown on the substrate 110 may vary dependingon areas comprising a center area A 1 and an edge area A2 of thesubstrate 110. That is, the semiconductor light emitting device 100grown on the substrate 110 according to the embodiment has wavelengthdistribution which is differently represented in two areas A 1 and A2due to the pattern formed in the backside of the substrate 110, theuniform temperature distribution and the concave down deformation. Thesemiconductor light emitting device grown on the conventional substratehas wavelength distribution corresponding to the fifth area 5 due tonon-uniform temperature distribution. According to the embodiment, thewavelength uniformity of the semiconductor light emitting device on thesubstrate can be improved.

In addition, a wavelength of the semiconductor light emitting device 100grown at the center area Al of the substrate 110 may not be lengthenedas compared with a reference value and a wavelength of the semiconductorlight emitting device 100 grown on the edge area A2 of the substrate 110may not be shortened as compared with the reference value.

FIG. 7 is a graph representing the wavelength distributions in variouspositions (1 to 5) of the substrate shown in FIG. 6.

FIG. 7 is a graph representing the wavelength uniformity for a PL (PhotoLuminescence) and an EL (Electronic Luminescence) corresponding to theareas of 1 to 5 of the substrate shown in FIG. 6. The graphs correspondto the number of substrates, and the graphs are obtained by measuringdata from 14 substrates, which are grown in an outer area of thesusceptor. Referring to such data, the semiconductor light emittingdevice 100 has a wavelength of 450 to 465 nm in each position of the 1to 5 areas of the substrate 110, so that the semiconductor has uniformwavelength distribution.

FIG. 8 is a side sectional view representing a state of the substrate ofthe semiconductor light emitting device according to the firstembodiment, in which the substrate is subject to a lapping process and apolishing process.

As shown in FIG. 8, semiconductor layers 122 to 128 are formed on thesubstrate 110. Then, a chip pattern (not shown) is formed on a surfaceof the second conductive semiconductor layer 128. After that, a lappingprocess and a polishing process are performed in the backside of thesubstrate 110. In this case, the substrate, which has been subject tothe lapping and polishing processes, has a thickness D3 of 80 to 130 μm.The concave-convex patterns 111 and 114 have a depth D4 of 0.1 to 10 μM.

In addition, if the chip is prepared in a size of 500*250 μm, the numberof concave-convex patterns 112, 113, 115 and 116 comprised in theindividual chip is about 625 to 52500. The number of the concave-convexpatterns 112, 113, 115 and 116 may be changed corresponding to a size ofthe chip and an interval between the patterns.

FIG. 9 is a side sectional view representing a light emitting device100B according to a second embodiment. The same reference numerals willbe assigned to the same elements which are identical to the elementsaccording to the first embodiment, and detailed description thereof willbe omitted in order to avoid redundancy.

As shown in FIG. 9, convex patterns 112A and 116A of concave-convexpatterns 111 and 114 formed in the backside of a substrate 110A has ahemispheric shape. The convex patterns 112A and 116A comprising thehemispheric shape may effectively control heat transferred from thesusceptor to the substrate 110.

FIG. 10 is a side sectional view representing a light emitting device100C according to a third embodiment. The same reference numerals willbe assigned to the same elements which are identical to the elementsaccording to the first embodiment, and detailed description thereof willbe omitted in order to avoid redundancy.

As shown in FIG. 10, concave-convex patterns 111 and 114 formed in thebackside of a substrate 110B may have a predetermined period. A concavepattern 115B formed at a center area of the substrate 110B has a depthD5 deeper than a depth D2 of the concave pattern 112 formed at a sidearea. The concave pattern 115B reduces thermal expansion and lowers thetemperature between convex patterns 116, so that the uniform temperaturedistribution is achieved over the entire area of the substrate 110B.

FIG. 11 is a side sectional view representing a light emitting device100D according to a fourth embodiment. The same reference numerals willbe assigned to the same elements which are identical to the elementsaccording to the first embodiment, and detailed description thereof willbe omitted in order to avoid redundancy.

As shown in FIG. 11, concave-convex patterns 111 and 114 are formed inthe backside of a substrate 110C, and concave-convex patterns 118 and119 are formed in the top-side of the substrate 110C. A concave pattern118 formed at a center area of the top-side of the substrate 110C have alarge width W3, or a distance between two convex pattern formed at acenter area of the top-side of the substrate 110C have a large interval.Through a structure of the patterns formed in the backside and thetop-side of the substrate 110C, the temperature of the substrate 110C isuniformly controlled, thereby improving the wavelength uniformity of thesemiconductor light emitting device grown on the substrate 110C.

Although the embodiment has been made in relation to the compoundsemiconductor light emitting device comprising the N—P junctionstructure as an example, the compound semiconductor light emittingdevice comprising an N—P—N structure, a P—N structure or a P—N—Pstructure can be implemented. In the description of the embodiment, itwill be understood that, when a layer (or film), a region, a pattern, ora structure is referred to as being “on (above/over/upper)” or “under(below/down/lower)” another substrate, another layer (or film), anotherregion, another pad, or another pattern, it can be directly on the othersubstrate, layer (or film), region, pad or pattern, or interveninglayers may also be present. Furthermore, it will be understood that,when a layer (or film), a region, a pattern, a pad, or a structure isreferred to as being “between” two layers (or films), regions, pads orpatterns, it can be the only layer between the two layers (or films),regions, pads, or patterns or one or more intervening layers may also bepresent. Thus, it should be determined by technical idea of theinvention.

Any reference in this specification to “one embodiment,” “anembodiment,” “example embodiment,” etc., means that a particularfeature, structure, or characteristic described in connection with theembodiment is comprised in at least one embodiment of the invention. Theappearances of such phrases in various places in the specification arenot necessarily all referring to the same embodiment. Further, when aparticular feature, structure, or characteristic is described inconnection with any embodiment, it is submitted that it is within thepurview of one skilled in the art to affect such feature, structure, orcharacteristic in connection with other ones of the embodiments.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or alignments of the subjectcombination alignment within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or alignments, alternative uses will also beapparent to those skilled in the art.

1. A semiconductor light emitting device, comprising: a substrate, inwhich concave-convex patterns are in at least one of a top-side and abackside of the substrate; and a light emitting structure on thesubstrate and comprising a first conductive semiconductor layer, asecond conductive semiconductor layer, and an active layer between thefirst conductive semiconductor layer and the second conductivesemiconductor layer, wherein the concave-convex patterns comprise firstconcave-convex patterns at a first area of the substrate and secondconcave-convex patterns at a second area of the substrate, wherein aconcave pattern of the first concave-convex patterns has a depth deeperthan a depth of a concave pattern of the second concave-convex patterns.2. The semiconductor light emitting device as claimed in claim 1,wherein the concave-convex patterns are formed at the backside of thesubstrate.
 3. The semiconductor light emitting device as claimed inclaim 1, wherein the substrate comprises one of sapphire (Al₂O₃), GaN,SiC, ZnO, GaP, GaAs and Si.
 4. The semiconductor light emitting deviceas claimed in claim 2, wherein the depth of the concave pattern of thesecond concave-convex patterns is about 200 to 400 μm.
 5. Thesemiconductor light emitting device as claimed in claim 2, wherein awidth of the concave pattern of the first concave-convex patterns and awidth of the concave pattern of the second concave-convex patterns is 1μm to 10 μm.
 6. The semiconductor light emitting device as claimed inclaim 2, wherein the first concave-convex patterns are aligned in acenter area in the backside of the substrate.
 7. The semiconductor lightemitting device as claimed in claim 1, wherein the concave-convexpatterns are aligned at an entire area of the substrate.
 8. Thesemiconductor light emitting device as claimed in claim 7, wherein aninterval of the concave pattern of the first concave-convex patterns andan interval of a convex pattern of the second concave-convex patternsare the same.
 9. The semiconductor light emitting device as claimed inclaim 7, wherein convex patterns of the concave-convex patterns areformed in a stripe shape.
 10. The semiconductor light emitting device asclaimed in claim 2, wherein the convex patterns of the concave-convexpatterns include at least one of a polygonal shape, or a horn-shape. 11.The semiconductor light emitting device as claimed in claim 1, whereinthe concave pattern of the first concave-convex patterns has a widthwider than a width of the concave pattern of the second concave-convexpatterns.
 12. The semiconductor light emitting device as claimed inclaim 1, wherein the concave pattern of the first concave-convexpatterns has a width 1.5 to 2.5 wider than a width of the concavepattern of the second concave-convex patterns.
 13. The semiconductorlight emitting device as claimed in claim 1, wherein the concave patternof the second concave-convex patterns has a depth of about 0.1 to 10 μm.14. The semiconductor light emitting device as claimed in claim 1,wherein the first conductive semiconductor layer comprises at least oneof GaN, AlGaN, InGaN, InN, AlN or InAlGaN.
 15. The semiconductor lightemitting device as claimed in claim 2, wherein the concave-convexpatterns are aligned at an entire area of the substrate.
 16. Thesemiconductor light emitting device as claimed in claim 15, wherein aninterval of the concave pattern of the first concave-convex patterns andan interval of a convex pattern of the second concave-convex patternsare the same.
 17. The semiconductor light emitting device as claimed inclaim 15, wherein convex patterns of the concave-convex patterns areformed in a stripe shape.
 18. The semiconductor light emitting device asclaimed in claim 15, wherein the depth of the concave pattern of thesecond concave-convex patterns is about 0.1 to 10 μm.
 19. Thesemiconductor light emitting device as claimed in claim 1, wherein theconcave-convex patterns are formed at the top-side of the substrate.